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| Code | photo_camera | Remains | shopping_cart | 1 | 2 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 049692 |  | Diode 5mA 16kV 0.08ms | total: 982 pcs маг ДП: 982 pcs |
| Быстрый диод | Diode | Одиночный | 5 мА | 16 kV | 80 нс | DO312 | ||||
| 031726 |  | Diode 0.15A 100V 4ns 200mW | total: 56350 pcs маг ДП: 56350 pcs |
| Быстрый диод | Diode | Одиночный | 0.15 А | 75 V | 4 нс | SOD123 | ||||
| 016327 |  | Schottky diode 2X0.2A 30V common anode | total: 6230 pcs маг ДП: 6230 pcs |
| Диод Шоттки | 2 Diode | Общий анод | 0.2 А | 30 V | SOT23 | |||||
| 026721 |  | Schottky diode 0.2A 30V SOT23 Single | total: 6800 pcs маг ДП: 800 pcs |
| Диод Шоттки | Diode | Одиночный | 0.2 А | 30 V | SOT23 | |||||
| 050633 | | Schottky diode 2X0.2A 30V series connection | total: 22040 pcs маг ДП: 1040 pcs |
| FOSAN | Диод Шоттки | 2 Diode | Полумост | 0.2 А | 30 V | SOT23 | ||||
| 003417 |  | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | total: 65600 pcs маг ДП: 65600 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 75 V | 4 нс | SOD80C | |||
| 050638 |  | Diode Two diodes in series Vr=80B, If=0.2A | total: 15040 pcs маг ДП: 15040 pcs |
| FOSAN | Быстрый диод | Полумост | 0.2 А | 80 V | 4 нс | SOT23 | ||||
| 026725 | | Diode 0.2A 100V 15ns serial connection | total: 720 pcs маг ДП: 720 pcs |
| TASUND | Быстрый диод | 2 Diode | Полумост | 0.2 А | 100 V | 15 нс | SOT23 | |||
| 027650 |  | Diode 0.2A 100V | total: 156365 pcs маг ДП: 91365 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 100 V | 4 нс | DO35 | |||
| 024726 | | Diode 0.2A 200V Sod123 | total: 11350 pcs маг ДП: 11350 pcs |
| CJ | Быстрый диод | Diode | Одиночный | 0.2 А | 200 V | 50 нс | SOD123 | |||
| 005836 | | Diode 0.2A 250V 50ns | total: 9788 pcs маг ДП: 9788 pcs |
| Быстрый диод | Diode | Одиночный | 0.2 А | 250 V | 50 нс | DO35 | ||||
| 027575 | | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | total: 8790 pcs маг ДП: 2790 pcs |
| Быстрый диод | 2 Diode | Общий анод | 0.215 А | 75 V | 4 нс | SOT23 | ||||
| 004006 |  | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | total: 7360 pcs маг ДП: 7360 pcs |
| Быстрый диод | 2 Diode | Общий катод | 0.215 А | 100 V | 4 нс | SOT23 | ||||
| 031507 |  | Diode Diode assembly two half-bridge 300V 225MA 50ns | total: 304 pcs маг ДП: 304 pcs |
| DIODES | Быстрый диод | 4 Diode | 2 полумоста | 0.225 А | 300 V | 50 нс | SOT23-6 | |||
| 005954 |  | Diode 0.2A 200V 50ns | total: 19940 pcs маг ДП: 19940 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.25 А | 200 V | 50 нс | SOD80C | |||
| 023535 |  | Diode 0.15A 100V 4ns 200mW | total: 3350 pcs маг ДП: 3350 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD323 | ||||
| 032970 |  | Diode | total: 31910 pcs маг ДП: 31910 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD523 | ||||
| 037086 |  | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | total: 125 pcs маг ДП: 125 pcs |
| SK | Выпрямительный диод | Diode | Одиночный | 0.35 А | 12 kV | |||||
| 029211 | | Diode 225mA 250V 50ns serial connection | total: 1360 pcs маг ДП: 1360 pcs |
| CJ | Быстрый диод | 2 Diode | Полумост | 0.4 А | 200 V | 50 нс | SOT23 | |||
| 002105 |  | Schottky diode 20V 1A/25Ap | total: 21230 pcs маг ДП: 2230 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 20 V | DO41 | ||||
| 007209 |  | Schottky diode Schottky diode 1A 20V | total: 3280 pcs маг ДП: 3280 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 20 V | SMA | |||||
| 007194 | | Schottky diode 30V 1A/25Ap | total: 5059 pcs маг ДП: 5059 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 30 V | DO41 | ||||
| 004808 | | Schottky diode 40V 1A/25Ap | total: 23335 pcs маг ДП: 4335 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 40 V | DO41 | ||||
| 006661 |  | Schottky diode Schottky diode 1A 40V | total: 19932 pcs маг ДП: 19932 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SMA | |||||
| 029028 | | Schottky diode 40V 1A | total: 27100 pcs маг ДП: 27100 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD323 | |||||
| 036054 |  | Schottky diode Diode 1A, 40V. | total: 29600 pcs маг ДП: 29600 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123-FL | |||||
| 036057 | | Schottky diode Schottky diode 1A, 40V. | total: 5020 pcs маг ДП: 2020 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD523 | |||||
| 040118 | | Schottky diode Schottky diode 1A, 40V. | total: 16850 pcs маг ДП: 16850 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | |||||
| 050637 | | Schottky diode Schottky diode 1A, 40V. | total: 24800 pcs маг ДП: 24800 pcs |
| FOSAN | Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | ||||
| 029199 |  | Diode | total: 26521 pcs маг ДП: 1521 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 50 V | DO41 | ||||
| 004240 | | Schottky diode Schottky diode 1A, 60B | total: 44150 pcs маг ДП: 44150 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 60 V | SMA | |||||
| 029196 | | Schottky diode 1A 60V | total: 6850 pcs маг ДП: 6850 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 60 V | DO41 | ||||
| 016328 | | Schottky diode Schottky diode 1A, 80B | total: 7870 pcs маг ДП: 7870 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 80 V | SMA | |||||
| 029198 | | Schottky diode 1A 100V | total: 4730 pcs маг ДП: 4730 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 100 V | DO41 | ||||
| 007175 |  | Diode 1A 400V 35ns | total: 29877 pcs маг ДП: 11877 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 400 V | 35 нс | DO41 | ||||
| 029200 | | Diode | total: 29640 pcs маг ДП: 140 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 400 V | DO41 | ||||
| 005635 |  | Diode 1A 600V 35ns | total: 15000 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 35 нс | DO41 | ||||
| 006780 |  | Diode 1A 600V 150ns | total: 17330 pcs маг ДП: 5330 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 150 нс | DO41 | ||||
| 004328 |  | Diode 1A 1000V | total: 51580 pcs маг ДП: 51580 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | 1.8 мкс | SMA | ||||
| 005903 |  | Diode 1A 1000V 75ns | total: 16210 pcs маг ДП: 3210 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 006200 |  | Diode 1A 1000V | total: 6650 pcs маг ДП: 6650 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | R-1 | |||||
| 011731 | | Diode 1A 1000V | total: 9640 pcs маг ДП: 9640 pcs |
| MIC | Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | DO41 | |||
| 016666 | | Diode 1A 1000V 75ns | total: 67110 pcs маг ДП: 59110 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | SMA | ||||
| 028275 | | Diode | total: 113450 pcs маг ДП: 113450 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SOD123-FL | |||||
| 029185 | | Diode | total: 16724 pcs маг ДП: 1724 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 034313 | | Diode 1000V 1A 500ns | total: 7140 pcs маг ДП: 7140 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL | ||||
| 036055 |  | Diode 1A, 1000V | total: 82200 pcs маг ДП: 82200 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SMAF | |||||
| 037637 | | Diode 1A 1000V | total: 13000 pcs маг ДП: 13000 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL | ||||
| 037643 | | Diode | total: 44490 pcs маг ДП: 44490 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 70 нс | SMAF | ||||
| 007192 | | Schottky diode 1.1A 100V | total: 150 pcs маг ДП: 150 pcs |
| IR | Диод Шоттки | Diode | Одиночный | 1.1 А | 100 V | DO204AL |
Rectifier diodes- diodes designed to convert alternating current into direct current.
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
