Code | photo_camera | Remains | shopping_cart | 1 | 2 | |||||||||
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049692 | ![]() | Diode 5mA 16kV 0.08ms | total: 982 pcs маг ДП: 982 pcs |
| Diode | Одиночный | Быстрый диод | 5 мА | 16 kV | DO312 | ||||
031726 | ![]() | Diode 0.15A 100V 4ns 200mW | total: 56350 pcs маг ДП: 56350 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 75 V | SOD123 | ||||
016327 | ![]() | Schottky diode 2X0.2A 30V common anode | total: 6230 pcs маг ДП: 6230 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | total: 6800 pcs маг ДП: 800 pcs |
| Diode | Одиночный | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
050633 | ![]() | Schottky diode 2X0.2A 30V series connection | total: 22040 pcs маг ДП: 1040 pcs |
| 2 Diode | Полумост | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | total: 65750 pcs маг ДП: 65750 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 75 V | SOD80C | SEMTECH | |||
050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | total: 15040 pcs маг ДП: 15040 pcs |
| Полумост | Быстрый диод | 0.2 А | 80 V | SOT23 | FOSAN | ||||
026725 | ![]() | Diode 0.2A 100V 15ns serial connection | total: 720 pcs маг ДП: 720 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 100 V | SOT23 | TASUND | |||
027650 | ![]() | Diode 0.2A 100V | total: 156365 pcs маг ДП: 91365 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 100 V | DO35 | SEMTECH | |||
024726 | ![]() | Diode 0.2A 200V Sod123 | total: 11350 pcs маг ДП: 11350 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 200 V | SOD123 | CJ | |||
005836 | ![]() | Diode 0.2A 250V 50ns | total: 9788 pcs маг ДП: 9788 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 250 V | DO35 | ||||
027575 | ![]() | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | total: 8790 pcs маг ДП: 2790 pcs |
| 2 Diode | Общий анод | Быстрый диод | 0.215 А | 75 V | SOT23 | ||||
004006 | ![]() | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | total: 7360 pcs маг ДП: 7360 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.215 А | 100 V | SOT23 | ||||
031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | total: 304 pcs маг ДП: 304 pcs |
| 4 Diode | 2 полумоста | Быстрый диод | 0.225 А | 300 V | SOT23-6 | DIODES | |||
005954 | ![]() | Diode 0.2A 200V 50ns | total: 19940 pcs маг ДП: 19940 pcs |
| Diode | Одиночный | Быстрый диод | 0.25 А | 200 V | SOD80C | SEMTECH | |||
023535 | ![]() | Diode 0.15A 100V 4ns 200mW | total: 3350 pcs маг ДП: 3350 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD323 | ||||
032970 | ![]() | Diode | total: 31910 pcs маг ДП: 31910 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD523 | ||||
037086 | ![]() | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | total: 125 pcs маг ДП: 125 pcs |
| Diode | Одиночный | Выпрямительный диод | 0.35 А | 12 kV | SK | ||||
029211 | ![]() | Diode 225mA 250V 50ns serial connection | total: 1360 pcs маг ДП: 1360 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.4 А | 200 V | SOT23 | CJ | |||
005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | total: 13380 pcs маг ДП: 1380 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | total: 6650 pcs маг ДП: 1650 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | total: 55675 pcs маг ДП: 5675 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | total: 49325 pcs маг ДП: 9325 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 1 kV | |||||
012858 | ![]() | Diode bridge 0.8A 1000V | total: 12134 pcs маг ДП: 2134 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | total: 27450 pcs маг ДП: 3450 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
002105 | ![]() | Schottky diode 20V 1A/25Ap | total: 21230 pcs маг ДП: 2230 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | DO41 | MIC | |||
007209 | ![]() | Schottky diode Schottky diode 1A 20V | total: 3280 pcs маг ДП: 3280 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | SMA | ||||
007194 | ![]() | Schottky diode 30V 1A/25Ap | total: 5059 pcs маг ДП: 5059 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 30 V | DO41 | MIC | |||
004808 | ![]() | Schottky diode 40V 1A/25Ap | total: 23335 pcs маг ДП: 4335 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | DO41 | MIC | |||
006661 | ![]() | Schottky diode Schottky diode 1A 40V | total: 19932 pcs маг ДП: 19932 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SMA | ||||
029028 | ![]() | Schottky diode 40V 1A | total: 27100 pcs маг ДП: 27100 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD323 | ||||
036054 | ![]() | Schottky diode Diode 1A, 40V. | total: 29600 pcs маг ДП: 29600 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123-FL | ||||
036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | total: 5070 pcs маг ДП: 2070 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | ||||
040118 | ![]() | Schottky diode Schottky diode 1A, 40V. | total: 16850 pcs маг ДП: 16850 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | ||||
050637 | ![]() | Schottky diode Schottky diode 1A, 40V. | total: 24800 pcs маг ДП: 24800 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | FOSAN | |||
029199 | ![]() | Diode | total: 26521 pcs маг ДП: 1521 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 50 V | DO41 | MIC | |||
004240 | ![]() | Schottky diode Schottky diode 1A, 60B | total: 44150 pcs маг ДП: 44150 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | SMA | ||||
029196 | ![]() | Schottky diode 1A 60V | total: 6850 pcs маг ДП: 6850 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | DO41 | MIC | |||
016328 | ![]() | Schottky diode Schottky diode 1A, 80B | total: 7870 pcs маг ДП: 7870 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 80 V | SMA | ||||
029198 | ![]() | Schottky diode 1A 100V | total: 4730 pcs маг ДП: 4730 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | DO41 | MIC | |||
007175 | ![]() | Diode 1A 400V 35ns | total: 29877 pcs маг ДП: 11877 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 400 V | DO41 | ||||
029200 | ![]() | Diode | total: 29640 pcs маг ДП: 140 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 400 V | DO41 | MIC | |||
005635 | ![]() | Diode 1A 600V 35ns | total: 15000 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
006780 | ![]() | Diode 1A 600V 150ns | total: 17330 pcs маг ДП: 5330 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
036052 | ![]() | Diode bridge Diode Bridge 1A 800V | total: 1048 pcs маг ДП: 1048 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 800 V | |||||
004328 | ![]() | Diode 1A 1000V | total: 51580 pcs маг ДП: 51580 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | SMA | ||||
005903 | ![]() | Diode 1A 1000V 75ns | total: 16220 pcs маг ДП: 3220 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | ||||
006200 | ![]() | Diode 1A 1000V | total: 6650 pcs маг ДП: 6650 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | R-1 | ||||
006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | total: 12478 pcs маг ДП: 9978 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | DIP4 | SEP | |||
011731 | ![]() | Diode 1A 1000V | total: 9640 pcs маг ДП: 9640 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | MIC |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink