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049692 | ![]() | Diode 5mA 16kV 0.08ms | всего: 960 pcs маг ДП: 960 pcs |
| Diode | Одиночный | Быстрый диод | 5 мА | 16 kV | DO312 | ||||
031726 | ![]() | Diode 0.15A 100V 4ns 200mW | всего: 10800 pcs маг ДП: 10800 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 75 V | SOD123 | ||||
050632 | ![]() | Diode 0.15A 75V | всего: 60000 pcs маг ДП: 60000 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 75 V | SOD123 | FOSAN | |||
016327 | ![]() | Schottky diode 2X0.2A 30V common anode | всего: 6230 pcs маг ДП: 6230 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | всего: 6800 pcs маг ДП: 800 pcs |
| Diode | Одиночный | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
050633 | ![]() | Schottky diode 2X0.2A 30V series connection | всего: 21990 pcs маг ДП: 990 pcs |
| 2 Diode | Полумост | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | всего: 63100 pcs маг ДП: 63100 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 75 V | SOD80C | SEMTECH | |||
050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | всего: 15020 pcs маг ДП: 15020 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 80 V | SOT23 | FOSAN | |||
026725 | ![]() | Diode 0.2A 100V 15ns serial connection | всего: 710 pcs маг ДП: 710 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 100 V | SOT23 | TASUND | |||
027650 | ![]() | Diode 0.2A 100V | всего: 155065 pcs маг ДП: 90065 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 100 V | DO35 | SEMTECH | |||
024726 | ![]() | Diode 0.2A 200V Sod123 | всего: 11250 pcs маг ДП: 11250 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 200 V | SOD123 | CJ | |||
005836 | ![]() | Diode 0.2A 250V 50ns | всего: 9788 pcs маг ДП: 9788 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 250 V | DO35 | ||||
027575 | ![]() | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | всего: 8790 pcs маг ДП: 2790 pcs |
| 2 Diode | Общий анод | Быстрый диод | 0.215 А | 75 V | SOT23 | ||||
004006 | ![]() | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | всего: 7360 pcs маг ДП: 7360 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.215 А | 100 V | SOT23 | ||||
031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | всего: 304 pcs маг ДП: 304 pcs |
| 4 Diode | 2 полумоста | Быстрый диод | 0.225 А | 300 V | SOT23-6 | DIODES | |||
005954 | ![]() | Diode 0.2A 200V 50ns | всего: 19940 pcs маг ДП: 19940 pcs |
| Diode | Одиночный | Быстрый диод | 0.25 А | 200 V | SOD80C | SEMTECH | |||
023535 | ![]() | Diode 0.15A 100V 4ns 200mW | всего: 3150 pcs маг ДП: 3150 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD323 | ||||
032970 | ![]() | Diode | всего: 31910 pcs маг ДП: 31910 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD523 | ||||
037086 | ![]() | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | всего: 125 pcs маг ДП: 125 pcs |
| Diode | Одиночный | Выпрямительный диод | 0.35 А | 12 kV | SK | ||||
029211 | ![]() | Diode 225mA 250V 50ns serial connection | всего: 1360 pcs маг ДП: 1360 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.4 А | 200 V | SOT23 | CJ | |||
005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 13380 pcs маг ДП: 1380 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 6650 pcs маг ДП: 1650 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | всего: 55655 pcs маг ДП: 5655 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | всего: 49305 pcs маг ДП: 9305 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 1 kV | |||||
012858 | ![]() | Diode bridge 0.8A 1000V | всего: 12134 pcs маг ДП: 2134 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | всего: 27390 pcs маг ДП: 3390 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
002105 | ![]() | Schottky diode 20V 1A/25Ap | всего: 21210 pcs маг ДП: 2210 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | DO41 | ||||
007209 | ![]() | Schottky diode Schottky diode 1A 20V | всего: 3130 pcs маг ДП: 3130 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | SMA | ||||
007194 | ![]() | Schottky diode 30V 1A/25Ap | всего: 5059 pcs маг ДП: 5059 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 30 V | DO41 | ||||
004808 | ![]() | Schottky diode 40V 1A/25Ap | всего: 52095 pcs маг ДП: 33095 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | DO41 | ||||
006661 | ![]() | Schottky diode Schottky diode 1A 40V | всего: 13607 pcs маг ДП: 13607 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SMA | ||||
029028 | ![]() | Schottky diode 40V 1A | всего: 26950 pcs маг ДП: 26950 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD323 | ||||
036054 | ![]() | Schottky diode Diode 1A, 40V. | всего: 29550 pcs маг ДП: 29550 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123-FL | ||||
036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 4870 pcs маг ДП: 1870 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | ||||
040118 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 13200 pcs маг ДП: 13200 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | ||||
050637 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 24750 pcs маг ДП: 24750 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | FOSAN | |||
029199 | ![]() | Diode | всего: 26501 pcs маг ДП: 1501 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 50 V | DO41 | MIC | |||
004240 | ![]() | Schottky diode Schottky diode 1A, 60B | всего: 44100 pcs маг ДП: 44100 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | SMA | ||||
029196 | ![]() | Schottky diode 1A 60V | всего: 6850 pcs маг ДП: 6850 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | DO41 | MIC | |||
016328 | ![]() | Schottky diode Schottky diode 1A, 80B | всего: 7870 pcs маг ДП: 7870 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 80 V | SMA | ||||
029198 | ![]() | Schottky diode 1A 100V | всего: 4730 pcs маг ДП: 4730 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | DO41 | MIC | |||
007175 | ![]() | Diode 1A 400V 35ns | всего: 29867 pcs маг ДП: 11867 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 400 V | DO41 | ||||
029200 | ![]() | Diode | всего: 29480 pcs маг ДП: 30 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 400 V | DO41 | MIC | |||
005635 | ![]() | Diode 1A 600V 35ns | всего: 14980 pcs маг ДП: 4980 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
006780 | ![]() | Diode 1A 600V 150ns | всего: 17320 pcs маг ДП: 5320 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
036052 | ![]() | Diode bridge Diode Bridge 1A 800V | всего: 1028 pcs маг ДП: 1028 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 800 V | |||||
004328 | ![]() | Diode 1A 1000V | всего: 51280 pcs маг ДП: 51280 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | SMA | ||||
005903 | ![]() | Diode 1A 1000V 75ns | всего: 16200 pcs маг ДП: 3200 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | ||||
006200 | ![]() | Diode 1A 1000V | всего: 6650 pcs маг ДП: 6650 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | R-1 | ||||
006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | всего: 12468 pcs маг ДП: 9968 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | DIP4 | SEP |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink